Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes

T. Fukumura, T. Shono, K. Inaba, T. Hasegawa, H. Koinuma, F. Matsukura, H. Ohno

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Magnetic domain structure of a ferromagnetic semiconductor, (Ga,Mn)As, is observed with a scanning Hall probe microscope and a scanning SQUID microscope at low temperature. The film with perpendicular magnetization has a maze pattern domain structure similar to those of conventional ferromagnetic materials, whereas the film with in-plane magnetization has unconventional domain structure that show random arrangement of the domains.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume10
Issue number1-3
DOIs
Publication statusPublished - 2001 May 1

Keywords

  • (Ga,Mn)As
  • Magnetic domains
  • Scanning Hall probe microscope
  • Scanning SQUID microscope

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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