Magnetic characterization of on-chip integrated layer of substituted Sr-M hexaferrite beyond 10 GHz

R. Sai, Y. Endo, Y. Shimada, R. Naik, N. Bhat, S. A. Shivashankar, M. Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The recent advent of telecommunication usage demands the frequency of operation to be in X-band (8-10 GHz) in near future. Finding a suitable magnetic material that exhibits sufficiently high permeability with ferromagnetic resonance (FMR) frequency at that band is a huge challenge and, therefore, hindering the progress of devices like inductors and noise suppressors.[1] The family of Hexaferrites is one of the most promising choices due to their reasonably high permeability and inherently large magnetocrystalline anisotropy that results in a very high FMR frequency.[2] However, measurement of FMR frequency among other high frequency magnetic characteristics beyond 10 GHz is extremely tricky and error-prone. The problem escalates during the measurement of thin film. Among the various techniques, coplanar waveguide (CPW) based measurements are very simple but extremely sensitive to noise.[3] One of the ways to improve signal to noise ratio is to reduce the CPW line-width so as to deliver more power along with the integration of magnetic layer directly on to it.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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