Magnetic characteristics of FePt nanodots formed by a self-assembled nanodot deposition method

C. K. Yin, H. Choi, J. C. Bea, M. Murugesan, J. H. Yoo, T. Fukushima, Yasukazu Murakami, T. Tanaka, Daisuke Shindo, M. Miyao, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

FePt nanodot with L10 face-centered-tetragonal (fct) structure has attracted considerable attention owing to its potentials for new applications including a high-density magnetic data storage and a novel nonvolatile memory which are produced by its high magnetocrystalline anisotropy1. FePt nanodots dispersed in a SiO2 film (FePt nanodot film) were formed by a self-assembled nanodots deposition (SAND) method in which FePt and SiO2 are co-sputtered in a high-vacuum RF magnetron sputtering equipment. Furthermore, FePt nanodot film with a monolayer of FePt nanodots was formed by annealing at 800°C for 1 h, due to the agglomeration of FePt atoms diffused in SiO2 films. The electron holography was a powerful tool to study the single-domain FePt nanodots. In this study, not only the phenomenon of FePt diffusion was evaluated, but also the ferromagnetic phase of monolayer FePt nanodots was analysed by electron holography10-11.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages401-404
Number of pages4
Publication statusPublished - 2007 Aug 23
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 2007 May 202007 May 24

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume4

Other

Other2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
CountryUnited States
CitySanta Clara, CA
Period07/5/2007/5/24

Keywords

  • Agglomeration
  • Annealing
  • FePt
  • Magnetic
  • Monolyer
  • Nanodot

ASJC Scopus subject areas

  • Mechanical Engineering

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