Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film

Y. Nishitani; M. Endo; F. Matsukura; H. Ohno

doi:10.1016/j.physe.2009.12.054

Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film

Y. Nishitani, M. Endo, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have grown a 5-nm-thick (Ga,Mn)Sb with Mn composition of 0.032, and investigated its magnetic properties and their electric-field dependence. The sample shows ferromagnetism below about 25 K, whose magnetic easy axis is perpendicular to plane. By utilizing a field-effect transistor structure, we show that the Curie temperature and magnetic anisotropy field can be controlled by the application of electric field.

Original language	English
Pages (from-to)	2681-2684
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	10
DOIs	https://doi.org/10.1016/j.physe.2009.12.054
Publication status	Published - 2010 Sep

Keywords

Field-effect transistor
Magnetic anisotropy
Magnetic semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2009.12.054

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title = "Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film",

abstract = "We have grown a 5-nm-thick (Ga,Mn)Sb with Mn composition of 0.032, and investigated its magnetic properties and their electric-field dependence. The sample shows ferromagnetism below about 25 K, whose magnetic easy axis is perpendicular to plane. By utilizing a field-effect transistor structure, we show that the Curie temperature and magnetic anisotropy field can be controlled by the application of electric field.",

keywords = "Field-effect transistor, Magnetic anisotropy, Magnetic semiconductor",

author = "Y. Nishitani and M. Endo and F. Matsukura and H. Ohno",

note = "Funding Information: This work was supported in part by Grant-in-Aids from MEXT/JSPS, the GCOE Program at Tohoku University, and a Research Fellowship from JSPS.",

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T1 - Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film

AU - Nishitani, Y.

AU - Endo, M.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was supported in part by Grant-in-Aids from MEXT/JSPS, the GCOE Program at Tohoku University, and a Research Fellowship from JSPS.

PY - 2010/9

Y1 - 2010/9

N2 - We have grown a 5-nm-thick (Ga,Mn)Sb with Mn composition of 0.032, and investigated its magnetic properties and their electric-field dependence. The sample shows ferromagnetism below about 25 K, whose magnetic easy axis is perpendicular to plane. By utilizing a field-effect transistor structure, we show that the Curie temperature and magnetic anisotropy field can be controlled by the application of electric field.

AB - We have grown a 5-nm-thick (Ga,Mn)Sb with Mn composition of 0.032, and investigated its magnetic properties and their electric-field dependence. The sample shows ferromagnetism below about 25 K, whose magnetic easy axis is perpendicular to plane. By utilizing a field-effect transistor structure, we show that the Curie temperature and magnetic anisotropy field can be controlled by the application of electric field.

KW - Field-effect transistor

KW - Magnetic anisotropy

KW - Magnetic semiconductor

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VL - 42

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EP - 2684

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 10

ER -

Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film

Abstract

Keywords

ASJC Scopus subject areas

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