Abstract
We have grown a 5-nm-thick (Ga,Mn)Sb with Mn composition of 0.032, and investigated its magnetic properties and their electric-field dependence. The sample shows ferromagnetism below about 25 K, whose magnetic easy axis is perpendicular to plane. By utilizing a field-effect transistor structure, we show that the Curie temperature and magnetic anisotropy field can be controlled by the application of electric field.
| Original language | English |
|---|---|
| Pages (from-to) | 2681-2684 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 42 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2010 Sep 1 |
Keywords
- Field-effect transistor
- Magnetic anisotropy
- Magnetic semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
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Cite this
Nishitani, Y., Endo, M., Matsukura, F., & Ohno, H. (2010). Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film. Physica E: Low-Dimensional Systems and Nanostructures, 42(10), 2681-2684. https://doi.org/10.1016/j.physe.2009.12.054