Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM

K. Shimura, N. Ohshima, S. Miura, R. Nebashi, T. Suzuki, H. Hada, S. Tahara

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We fabricated toggle magnetic random access memories with clad writing lines. First, we evaluated the structures and magnetic properties of sputter-deposited cladding layers. The substrate bias during the deposition affected not only the sidewall coverage, but also the crystallinity and magnetic properties of the cladding. The optimized clad lines reduced the writing current to as low as 50% of that of unclad lines. Moreover, the writing current deviation divided by the average current of magnetic tunnel junction cells with clad lines was as low as that with unclad lines. Using the optimized clad lines, we constructed memory arrays with a large operating margin and reduced switching current.

Original languageEnglish
Pages (from-to)2736-2738
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number10
Publication statusPublished - 2006 Oct
Externally publishedYes


  • Clad line
  • magnetic property
  • structure
  • toggle MRAM
  • writing current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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