Magnetic and transport properties of Yb5T4Ge 10 (T=Co, Rh, Ir)

K. Katoh, T. Tsutsumi, K. Yamada, G. Terui, Y. Niide, A. Ochiai

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11 Citations (Scopus)

Abstract

The magnetic and transport properties of Yb5T4Ge 10 and Lu5T4Ge10 (T=Co, Rh, Ir) have been investigated. All Yb compounds are metals with the paramagnetic state above 1.2 K. Some magnetic transition is commonly expected below 1.2 K from the result of the specific heat. Single crystal of Yb5Rh 4Ge10 has been grown by the Bridgman method. Magnetic susceptibility of Yb5Rh4Ge10 shows a strong anisotropy with the easy-plane type within the c-plane. At 2 K, magnetization of Yb5Rh4Ge10 for H∥a gradually increases as increasing the magnetic field and saturates to a constant value of 4.5μB/f.u. in H=50kOe in contrast to magnetization for H∥c, which keeps increasing to 0.9μB/f.u. in H=50kOe. The magnetic part of the specific heat for Yb5Rh4Ge10 shows the Schottky anomaly centered at about 60 K due to the CEF effect, which acts on the eight-hold multiplet of Yb3+ ion. Furthermore, a broad peak appears at low temperatures by the application of the magnetic field. Height of this peak is very low as compared to the Schottky peak expected for the two-levels split from the ground state doublet for five Yb3+ ions in formula unit. The magnetic entropy gain in the magnetic field for Yb5Rh 4Ge10 at 300 K does not attain to 5R ln8, therefore, there is a possibility that the mixed valence state consisted of three or four Yb3+ ions among five Yb ions in formula unit is realized in all temperature range. A similar situation is found in Yb5Co 4Ge10 and Yb5Ir4Ge10.

Original languageEnglish
Pages (from-to)111-119
Number of pages9
JournalPhysica B: Condensed Matter
Volume373
Issue number1
DOIs
Publication statusPublished - 2006 Mar 1

Keywords

  • Electrical resistivity
  • Magnetic properties
  • Specific heat
  • Yb RhGe
  • YbCoGe
  • YbIrGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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