TY - JOUR
T1 - Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (in, mn)as/(ga, al)sb
AU - Oiwa, A.
AU - Endo, A.
AU - Katsumoto, S.
AU - Iye, Y.
AU - Ohno, H.
AU - Munekata, H.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - We have investigated the magnetic and transport properties of (In, Mn)As thin films grown on a (Ga, Al)Sb layer. Strong perpendicular magnetic anisotropy is observed for the (In, Mn)As layer, the thickness of which is less than the critical value required for relaxation of lattice-mismatch-induced strain. The anomalous Hall coefficient is found to be approximately proportional to the square of resistivity in the low-field region. Large negative magnetoresistance is found to occur over a magnetic field range significantly wider than that for the ferromagnetic hysteresis loop.
AB - We have investigated the magnetic and transport properties of (In, Mn)As thin films grown on a (Ga, Al)Sb layer. Strong perpendicular magnetic anisotropy is observed for the (In, Mn)As layer, the thickness of which is less than the critical value required for relaxation of lattice-mismatch-induced strain. The anomalous Hall coefficient is found to be approximately proportional to the square of resistivity in the low-field region. Large negative magnetoresistance is found to occur over a magnetic field range significantly wider than that for the ferromagnetic hysteresis loop.
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U2 - 10.1103/PhysRevB.59.5826
DO - 10.1103/PhysRevB.59.5826
M3 - Article
AN - SCOPUS:0000076449
VL - 59
SP - 5826
EP - 5831
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 8
ER -