Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (in, mn)as/(ga, al)sb

A. Oiwa, A. Endo, S. Katsumoto, Y. Iye, H. Ohno, H. Munekata

Research output: Contribution to journalArticlepeer-review

78 Citations (Scopus)

Abstract

We have investigated the magnetic and transport properties of (In, Mn)As thin films grown on a (Ga, Al)Sb layer. Strong perpendicular magnetic anisotropy is observed for the (In, Mn)As layer, the thickness of which is less than the critical value required for relaxation of lattice-mismatch-induced strain. The anomalous Hall coefficient is found to be approximately proportional to the square of resistivity in the low-field region. Large negative magnetoresistance is found to occur over a magnetic field range significantly wider than that for the ferromagnetic hysteresis loop.

Original languageEnglish
Pages (from-to)5826-5831
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number8
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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