Magnetic and superconducting properties of CeTX3 (T: Transition metal and X: Si and Ge) with non-centrosymmetric crystal structure

Tomoya Kawai, Hiroshi Muranaka, Marie Aude Measson, Tetsuya Shimoda, Yusuke Doi, Tatsuma D. Matsuda, Yoshinori Haga, Georg Knebel, Gérard Lapertot, Dai Aoki, Jacques Flouquet, Tetsuya Takeuchi, Rikio Settai, Yoshichika Onuki

Research output: Contribution to journalArticlepeer-review

95 Citations (Scopus)


We grew single crystals of non-centrosymmetric compounds CeTSi3 and CeTGe3 (T: transition metal), and studied the magnetic properties by measuring the electrical resistivity, magnetic susceptibility and magnetization. We also studied the effect of pressure on the electronic states in antiferromagnets CeTGe3 (T: Co, Rh, Ir) by measuring the resistivity under pressure. No noticeable change of the Néel temperature was observed up to 8 GPa in CeRhGe3 and CeIrGe3, which are far from the magnetic quantum critical point. On the other hand, the Néel temperature in CeCoGe3 was strongly decreased as a function of pressure, and pressure-induced superconductivity was observed in the pressure region from 5.4 GPa to about 7.5 GPa. The slope of upper critical field Hc2 at 6.5 GPa is found to be extremely large, with an upturn curvature of Hc2 with decreasing temperature: -dHc2/dT = 200 kOe/K at the superconducting transition temperature Tsc = 0.69 K, revealing unconventional superconductivity.

Original languageEnglish
Article number064716
Journaljournal of the physical society of japan
Issue number6
Publication statusPublished - 2008 Jun
Externally publishedYes


  • CeCoGe
  • CeIrGe
  • CeRhGe
  • CeRuSi
  • Magnetic susceptibility
  • Non-centrosymmetry
  • Pressure-induced superconductivity
  • Upper critical field

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Magnetic and superconducting properties of CeTX<sub>3</sub> (T: Transition metal and X: Si and Ge) with non-centrosymmetric crystal structure'. Together they form a unique fingerprint.

Cite this