TY - JOUR
T1 - Magnetic and electronic states in (LaMnO3)2(SrMnO3)2 superlattice exhibiting a large negative magnetoresistance
AU - Nakao, Hironori
AU - Sudayama, Takaaki
AU - Kubota, Masato
AU - Okamoto, Jun
AU - Yamasaki, Yuichi
AU - Murakami, Youichi
AU - Yamada, Hiroyuki
AU - Sawa, Akihito
AU - Iwasa, Kazuaki
N1 - Publisher Copyright:
© 2015 American Physical Society.
PY - 2015/12/7
Y1 - 2015/12/7
N2 - Magnetic and electronic states in (LaMnO3)2(SrMnO3)2 superlattices fabricated on an (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 substrate, which exhibit a large nontrivial negative magnetoresistance (MR) effect, have been investigated. The crystal structure and the Mn valence state were determined using x-ray scattering measurements near the Mn K edge. These measurements revealed that the Mn valences in the LaMnO3 and SrMnO3 layers are 3+ and 4+, respectively; that is, valence modulation coincides with the La/Sr stacking structure. The Mn spin structure was studied by means of resonant soft x-ray scattering at the Mn L2,3 edge and neutron magnetic scattering measurements. We succeeded in detecting a magnetic signal indicating ferromagnetism at the interface. Finally, we suggest that the origin of the MR is the competition between ferromagnetism at the interface and underlying antiferromagnetism.
AB - Magnetic and electronic states in (LaMnO3)2(SrMnO3)2 superlattices fabricated on an (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 substrate, which exhibit a large nontrivial negative magnetoresistance (MR) effect, have been investigated. The crystal structure and the Mn valence state were determined using x-ray scattering measurements near the Mn K edge. These measurements revealed that the Mn valences in the LaMnO3 and SrMnO3 layers are 3+ and 4+, respectively; that is, valence modulation coincides with the La/Sr stacking structure. The Mn spin structure was studied by means of resonant soft x-ray scattering at the Mn L2,3 edge and neutron magnetic scattering measurements. We succeeded in detecting a magnetic signal indicating ferromagnetism at the interface. Finally, we suggest that the origin of the MR is the competition between ferromagnetism at the interface and underlying antiferromagnetism.
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U2 - 10.1103/PhysRevB.92.245104
DO - 10.1103/PhysRevB.92.245104
M3 - Article
AN - SCOPUS:84952333175
VL - 92
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 24
M1 - 245104
ER -