Magnetic and electrical properties of NiFe-oxide mixture films

Koichi Nishioka; Katsuya Mitsuoka; Hiroshi Fukui; Shinji Narishige; Moriaki Fuyama

doi:10.1109/20.490076

Magnetic and electrical properties of NiFe-oxide mixture films

Koichi Nishioka, Katsuya Mitsuoka, Hiroshi Fukui, Shinji Narishige, Moriaki Fuyama

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In order to improve the performance of Magnetoresistive heads, higher saturation flux density Bs and higher resistivity p are preferable for Soft Adjacent Layer (SAL). NiFe-oxide (oxide= SiO₂, Al₂O₃, ZrO₂ and Ta₂O₅) mixture films were investigated for SAL. Among these films, NiFe-ZrO2 system is preferable because of its high Bs ρ value and low coercivity. The stability of the NiFe-ZrO₂ system at 250°C was also investigated, which shows that Bs and ρ change by annealing and the changes are larger as ZrO₂ content is larger. As for an application, MR devices which have 3.2 µm width and 2.8 µm height were fabricated and transfer curves were measured. The maximum output voltage of the device in which NiFe-12mol% ZrO₂ was employed was 23% larger than the calculated value for the decice in which NiFe-Nb (Bs ρ=60 Tesla µΩcm) was assumed to be employed.

Original language	English
Pages (from-to)	2633-2635
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/20.490076
Publication status	Published - 1995 Nov
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{1b3bb741fd464dc8a64db92a67730240,

title = "Magnetic and electrical properties of NiFe-oxide mixture films",

abstract = "In order to improve the performance of Magnetoresistive heads, higher saturation flux density Bs and higher resistivity p are preferable for Soft Adjacent Layer (SAL). NiFe-oxide (oxide= SiO2, Al2O3, ZrO2 and Ta2O5) mixture films were investigated for SAL. Among these films, NiFe-ZrO2 system is preferable because of its high Bs ρ value and low coercivity. The stability of the NiFe-ZrO2 system at 250°C was also investigated, which shows that Bs and ρ change by annealing and the changes are larger as ZrO2 content is larger. As for an application, MR devices which have 3.2 µm width and 2.8 µm height were fabricated and transfer curves were measured. The maximum output voltage of the device in which NiFe-12mol% ZrO2 was employed was 23% larger than the calculated value for the decice in which NiFe-Nb (Bs ρ=60 Tesla µΩcm) was assumed to be employed.",

author = "Koichi Nishioka and Katsuya Mitsuoka and Hiroshi Fukui and Shinji Narishige and Moriaki Fuyama",

year = "1995",

month = nov,

doi = "10.1109/20.490076",

language = "English",

volume = "31",

pages = "2633--2635",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Magnetic and electrical properties of NiFe-oxide mixture films

AU - Nishioka, Koichi

AU - Mitsuoka, Katsuya

AU - Fukui, Hiroshi

AU - Narishige, Shinji

AU - Fuyama, Moriaki

PY - 1995/11

Y1 - 1995/11

N2 - In order to improve the performance of Magnetoresistive heads, higher saturation flux density Bs and higher resistivity p are preferable for Soft Adjacent Layer (SAL). NiFe-oxide (oxide= SiO2, Al2O3, ZrO2 and Ta2O5) mixture films were investigated for SAL. Among these films, NiFe-ZrO2 system is preferable because of its high Bs ρ value and low coercivity. The stability of the NiFe-ZrO2 system at 250°C was also investigated, which shows that Bs and ρ change by annealing and the changes are larger as ZrO2 content is larger. As for an application, MR devices which have 3.2 µm width and 2.8 µm height were fabricated and transfer curves were measured. The maximum output voltage of the device in which NiFe-12mol% ZrO2 was employed was 23% larger than the calculated value for the decice in which NiFe-Nb (Bs ρ=60 Tesla µΩcm) was assumed to be employed.

AB - In order to improve the performance of Magnetoresistive heads, higher saturation flux density Bs and higher resistivity p are preferable for Soft Adjacent Layer (SAL). NiFe-oxide (oxide= SiO2, Al2O3, ZrO2 and Ta2O5) mixture films were investigated for SAL. Among these films, NiFe-ZrO2 system is preferable because of its high Bs ρ value and low coercivity. The stability of the NiFe-ZrO2 system at 250°C was also investigated, which shows that Bs and ρ change by annealing and the changes are larger as ZrO2 content is larger. As for an application, MR devices which have 3.2 µm width and 2.8 µm height were fabricated and transfer curves were measured. The maximum output voltage of the device in which NiFe-12mol% ZrO2 was employed was 23% larger than the calculated value for the decice in which NiFe-Nb (Bs ρ=60 Tesla µΩcm) was assumed to be employed.

UR - http://www.scopus.com/inward/record.url?scp=0029408051&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029408051&partnerID=8YFLogxK

U2 - 10.1109/20.490076

DO - 10.1109/20.490076

M3 - Article

AN - SCOPUS:0029408051

VL - 31

SP - 2633

EP - 2635

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 6

ER -