TY - JOUR
T1 - Magnesium doping controlled density and mobility of two-dimensional electron gas in MgxZn1-xO/ZnO heterostructures
AU - Falson, Joseph
AU - Maryenko, Denis
AU - Kozuka, Yusuke
AU - Tsukazaki, Atsushi
AU - Kawasaki, Masashi
PY - 2011/9
Y1 - 2011/9
N2 - The magnesium content in MgxZn1-xO/ZnO heterostructures grown by molecular beam epitaxy enables the careful control of the carrier density of the two-dimensional electron system down to 5.6 × 1010 cm2 while retaining a mobility of 200,000 cm 2 V-1 S-1 when pursuing magnesium concentrations as low as x=0.0038. By selecting an optimum magnesium content (x ∼ 0.01), the mobility is enhanced to over 700,000 cm2 V -1 S-1 due to reduced impurity levels associated with the use of pure distilled ozone and avoiding interface roughness scattering. This control technique allows access to the coherent transport region with strong electron-electron interaction.
AB - The magnesium content in MgxZn1-xO/ZnO heterostructures grown by molecular beam epitaxy enables the careful control of the carrier density of the two-dimensional electron system down to 5.6 × 1010 cm2 while retaining a mobility of 200,000 cm 2 V-1 S-1 when pursuing magnesium concentrations as low as x=0.0038. By selecting an optimum magnesium content (x ∼ 0.01), the mobility is enhanced to over 700,000 cm2 V -1 S-1 due to reduced impurity levels associated with the use of pure distilled ozone and avoiding interface roughness scattering. This control technique allows access to the coherent transport region with strong electron-electron interaction.
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U2 - 10.1143/APEX.4.091101
DO - 10.1143/APEX.4.091101
M3 - Article
AN - SCOPUS:80052599025
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 9
M1 - 091101
ER -