The magnesium content in MgxZn1-xO/ZnO heterostructures grown by molecular beam epitaxy enables the careful control of the carrier density of the two-dimensional electron system down to 5.6 × 1010 cm2 while retaining a mobility of 200,000 cm 2 V-1 S-1 when pursuing magnesium concentrations as low as x=0.0038. By selecting an optimum magnesium content (x ∼ 0.01), the mobility is enhanced to over 700,000 cm2 V -1 S-1 due to reduced impurity levels associated with the use of pure distilled ozone and avoiding interface roughness scattering. This control technique allows access to the coherent transport region with strong electron-electron interaction.
ASJC Scopus subject areas
- Physics and Astronomy(all)