Luminescence of rare earth doped porous silicon

T. Kimura, I. Hosokawa, Y. Nishida, T. Dejima, R. Saito, T. Ikoma

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Photoluminescence characteristics of porous silicon layers (PSLs) doped with Er or Yb ions are studied. 10 μm thick PSLs with a luminescence centered at ≈0.8 μm are formed by anodic etching of p-type silicon wafers of several Ω-cm resistivity. Rare-earth ions are electrochemically incorporated into PSLs. The Er3+-related luminescence at 1.54 μm as well as the Yb3+-related luminescence at 1.0 μm is observed at room temperature after annealing at high temperatures (>900°C). The Er-related luminescence is enhanced after annealing in O2, whereas the Yb3+-related luminescence needs oxygen-free atmosphere (H2) for the optical activation. The luminescence decay time of the rare earth ions as well as the host PSLs is measured and the energy transfer mechanism is discussed.

Original languageEnglish
Pages (from-to)149-154
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume422
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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