Luminescence of rare earth doped porous silicon

T. Kimura; I. Hosokawa; Y. Nishida; T. Dejima; R. Saito; T. Ikoma

doi:10.1557/proc-422-149

Luminescence of rare earth doped porous silicon

T. Kimura, I. Hosokawa, Y. Nishida, T. Dejima, R. Saito, T. Ikoma

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Photoluminescence characteristics of porous silicon layers (PSLs) doped with Er or Yb ions are studied. 10 μm thick PSLs with a luminescence centered at ≈0.8 μm are formed by anodic etching of p-type silicon wafers of several Ω-cm resistivity. Rare-earth ions are electrochemically incorporated into PSLs. The Er³⁺-related luminescence at 1.54 μm as well as the Yb³⁺-related luminescence at 1.0 μm is observed at room temperature after annealing at high temperatures (>900°C). The Er-related luminescence is enhanced after annealing in O₂, whereas the Yb³⁺-related luminescence needs oxygen-free atmosphere (H₂) for the optical activation. The luminescence decay time of the rare earth ions as well as the host PSLs is measured and the energy transfer mechanism is discussed.

Original language	English
Pages (from-to)	149-154
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	422
DOIs	https://doi.org/10.1557/proc-422-149
Publication status	Published - 1996 Jan 1
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 1996 Apr 8 → 1996 Apr 12

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Luminescence of rare earth doped porous silicon",

abstract = "Photoluminescence characteristics of porous silicon layers (PSLs) doped with Er or Yb ions are studied. 10 μm thick PSLs with a luminescence centered at ≈0.8 μm are formed by anodic etching of p-type silicon wafers of several Ω-cm resistivity. Rare-earth ions are electrochemically incorporated into PSLs. The Er3+-related luminescence at 1.54 μm as well as the Yb3+-related luminescence at 1.0 μm is observed at room temperature after annealing at high temperatures (>900°C). The Er-related luminescence is enhanced after annealing in O2, whereas the Yb3+-related luminescence needs oxygen-free atmosphere (H2) for the optical activation. The luminescence decay time of the rare earth ions as well as the host PSLs is measured and the energy transfer mechanism is discussed.",

author = "T. Kimura and I. Hosokawa and Y. Nishida and T. Dejima and R. Saito and T. Ikoma",

year = "1996",

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doi = "10.1557/proc-422-149",

language = "English",

volume = "422",

pages = "149--154",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Luminescence of rare earth doped porous silicon

AU - Kimura, T.

AU - Hosokawa, I.

AU - Nishida, Y.

AU - Dejima, T.

AU - Saito, R.

AU - Ikoma, T.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Photoluminescence characteristics of porous silicon layers (PSLs) doped with Er or Yb ions are studied. 10 μm thick PSLs with a luminescence centered at ≈0.8 μm are formed by anodic etching of p-type silicon wafers of several Ω-cm resistivity. Rare-earth ions are electrochemically incorporated into PSLs. The Er3+-related luminescence at 1.54 μm as well as the Yb3+-related luminescence at 1.0 μm is observed at room temperature after annealing at high temperatures (>900°C). The Er-related luminescence is enhanced after annealing in O2, whereas the Yb3+-related luminescence needs oxygen-free atmosphere (H2) for the optical activation. The luminescence decay time of the rare earth ions as well as the host PSLs is measured and the energy transfer mechanism is discussed.

AB - Photoluminescence characteristics of porous silicon layers (PSLs) doped with Er or Yb ions are studied. 10 μm thick PSLs with a luminescence centered at ≈0.8 μm are formed by anodic etching of p-type silicon wafers of several Ω-cm resistivity. Rare-earth ions are electrochemically incorporated into PSLs. The Er3+-related luminescence at 1.54 μm as well as the Yb3+-related luminescence at 1.0 μm is observed at room temperature after annealing at high temperatures (>900°C). The Er-related luminescence is enhanced after annealing in O2, whereas the Yb3+-related luminescence needs oxygen-free atmosphere (H2) for the optical activation. The luminescence decay time of the rare earth ions as well as the host PSLs is measured and the energy transfer mechanism is discussed.

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AN - SCOPUS:0030403956

VL - 422

SP - 149

EP - 154

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Luminescence of rare earth doped porous silicon

Abstract

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