Luminescence in SiO2 induced by MeV energy proton irradiation

S. Nagata, S. Yamamoto, K. Toh, B. Tsuchiya, N. Ohtsu, T. Shikama, H. Naramoto

Research output: Contribution to journalConference article

26 Citations (Scopus)

Abstract

Ion-induced luminescence was measured at room temperature for SiO 2 glasses with different OH concentration during irradiation by protons with 0.2-2 MeV energies. In addition to a prominent peak at 460 nm, characteristic peaks were detected at 390 and 650 nm, depending on the OH contents. For silica glasses with lower OH, the 390 nm luminescence appeared at a low dose and its intensity decreased quickly with an increase of the ion dose. The higher intensity for the 650 nm luminescence, related with the non-bridging oxygen hole centers, was found for higher OH concentration. On the other hand, the luminescence at 460 nm was not efficiently emitted from the silica glasses with higher OH when irradiated by MeV protons with low-electronic energy loss.

Original languageEnglish
Pages (from-to)1507-1510
Number of pages4
JournalJournal of Nuclear Materials
Volume329-333
Issue number1-3 PART B
DOIs
Publication statusPublished - 2004 Aug 1
EventProceedings of the 11th Conference on Fusion Research - Kyoto, Japan
Duration: 2003 Dec 72003 Dec 12

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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    Nagata, S., Yamamoto, S., Toh, K., Tsuchiya, B., Ohtsu, N., Shikama, T., & Naramoto, H. (2004). Luminescence in SiO2 induced by MeV energy proton irradiation. Journal of Nuclear Materials, 329-333(1-3 PART B), 1507-1510. https://doi.org/10.1016/j.jnucmat.2004.04.242