Luminescence characteristics of the LPE-grown undoped and In-doped ZnO thin films and bulk single crystals

Jan Pejchal, Y. Kagamitani, D. Ehrentraut, H. Sato, H. Odaka, H. Hatanaka, M. Nikl, A. Yoshikawa, H. Fukumura, T. Fukuda

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)

Abstract

The time-resolved emission spectroscopy using the fs-laser pulse and ps X-ray excitations was employed to compare the luminescence characteristics of the liquid phase epitaxy grown ZnO films and the hydrothermally grown single crystals. Reabsorption of the excitonic emission is demonstrated in the bulk ZnO. In the In-doped films the donor-acceptor pair recombination luminescence was evidenced above 400 nm and its decay was found to obey the t-1 law.

Original languageEnglish
Pages (from-to)942-945
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number3
DOIs
Publication statusPublished - 2007 Dec 1
Event10th Europhysical Conference on Defects in Insulating Materials, EURODIM 2006 - Milano, Italy
Duration: 2006 Jul 102006 Jul 14

ASJC Scopus subject areas

  • Condensed Matter Physics

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