Luminescence characteristics and defect formation in silica glasses under H and He ion irradiation

S. Nagata, S. Yamamoto, A. Inouye, B. Tsuchiya, K. Toh, T. Shikama

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


Ion beam induced luminescence from silica glasses containing various OH concentrations was measured to examine the effects of OH and the energy deposition processes on the damage creation under irradiation by H and He ions in the energy range 0.2-3.0 MeV. The 2.7 eV luminescence center corresponding to the B oxygen deficiency centers was less effectively created in the high-OH silica, where the 1.9 eV luminescence originating from the non-bridging oxygen hole centers were prominent. Ion implantation and thermal release experiments showed that MeV ion induced defects trapped hydrogen along its trajectory as a form of Si-H. Annihilation of B centers can be promoted in high-OH silica, by trapping of hydrogen released by the ion induced dissociation of OH. The energy dependence of the initial growth rate of luminescence suggested that the relatively large electronic energy loss of He ions plays roles in excitation and/or production of oxygen vacancies.

Original languageEnglish
Pages (from-to)1009-1013
Number of pages5
JournalJournal of Nuclear Materials
Volume367-370 B
Issue numberSPEC. ISS.
Publication statusPublished - 2007 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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