Luminescence and light yield of (Gd2Y)(Ga3Al2)O12:Pr3+ single crystal scintillators

Prapon Lertloypanyachai; Nichakorn Pathumrangsan; Krittiya Sreebunpeng; Nakarin Pattanaboonmee; Weerapong Chewpraditkul; Akira Yoshikawa; Kei Kamada; Martin Nikl

doi:10.1016/j.jcrysgro.2016.10.018

Luminescence and light yield of (Gd₂Y)(Ga₃Al₂)O₁₂:Pr³⁺ single crystal scintillators

Prapon Lertloypanyachai, Nichakorn Pathumrangsan, Krittiya Sreebunpeng, Nakarin Pattanaboonmee, Weerapong Chewpraditkul, Akira Yoshikawa, Kei Kamada, Martin Nikl

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Praseodymium-doped (Gd₂Y)(Ga₃Al₂)O₁₂ (GYGAG: Pr) single crystals are grown by the micro-pulling down method with different Pr concentrations. The energy transfer process between Pr³⁺ and Gd³⁺ is investigated by photoluminescence excitation (PLE) and emission (PL) spectra measurements. Photoelectron yield measurements are carried out using photomultiplier. At 662 keV γ-rays, photoelectron yield of 2520 phe/MeV obtained for the GYGAG: Pr (0.01%) sample is larger than that of 1810 phe/MeV obtained for BGO crystal. Light yield degradation for the GYGAG: Pr scintillators is presumably due to the energy transfer from 5d state of Pr³⁺ to 4f state of Gd³⁺ together with the concentration quenching in the Gd³⁺-sublattice.

Original language	English
Pages (from-to)	369-372
Number of pages	4
Journal	Journal of Crystal Growth
Volume	468
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.10.018
Publication status	Published - 2017 Jun 15

Keywords

A1.Luminescence
A1.Photoelectron yield
A1.Scintillation
B1.(GdY)(GaAl)O:Pr

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Lertloypanyachai, P., Pathumrangsan, N., Sreebunpeng, K., Pattanaboonmee, N., Chewpraditkul, W., Yoshikawa, A., Kamada, K., & Nikl, M. (2017). Luminescence and light yield of (Gd₂Y)(Ga₃Al₂)O₁₂:Pr³⁺ single crystal scintillators. Journal of Crystal Growth, 468, 369-372. https://doi.org/10.1016/j.jcrysgro.2016.10.018

Luminescence and light yield of (Gd₂Y)(Ga₃Al₂)O₁₂:Pr³⁺ single crystal scintillators. / Lertloypanyachai, Prapon; Pathumrangsan, Nichakorn; Sreebunpeng, Krittiya; Pattanaboonmee, Nakarin; Chewpraditkul, Weerapong; Yoshikawa, Akira ; Kamada, Kei; Nikl, Martin.

In: Journal of Crystal Growth, Vol. 468, 15.06.2017, p. 369-372.

Research output: Contribution to journal › Article

@article{f2d614ba89d4416ea8aec6bb83bf5531,

title = "Luminescence and light yield of (Gd2Y)(Ga3Al2)O12:Pr3+ single crystal scintillators",

abstract = "Praseodymium-doped (Gd2Y)(Ga3Al2)O12 (GYGAG: Pr) single crystals are grown by the micro-pulling down method with different Pr concentrations. The energy transfer process between Pr3+ and Gd3+ is investigated by photoluminescence excitation (PLE) and emission (PL) spectra measurements. Photoelectron yield measurements are carried out using photomultiplier. At 662 keV γ-rays, photoelectron yield of 2520 phe/MeV obtained for the GYGAG: Pr (0.01%) sample is larger than that of 1810 phe/MeV obtained for BGO crystal. Light yield degradation for the GYGAG: Pr scintillators is presumably due to the energy transfer from 5d state of Pr3+ to 4f state of Gd3+ together with the concentration quenching in the Gd3+-sublattice.",

keywords = "A1.Luminescence, A1.Photoelectron yield, A1.Scintillation, B1.(GdY)(GaAl)O:Pr",

author = "Prapon Lertloypanyachai and Nichakorn Pathumrangsan and Krittiya Sreebunpeng and Nakarin Pattanaboonmee and Weerapong Chewpraditkul and Akira Yoshikawa and Kei Kamada and Martin Nikl",

year = "2017",

month = jun,

day = "15",

doi = "10.1016/j.jcrysgro.2016.10.018",

language = "English",

volume = "468",

pages = "369--372",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Luminescence and light yield of (Gd2Y)(Ga3Al2)O12:Pr3+ single crystal scintillators

AU - Lertloypanyachai, Prapon

AU - Pathumrangsan, Nichakorn

AU - Sreebunpeng, Krittiya

AU - Pattanaboonmee, Nakarin

AU - Chewpraditkul, Weerapong

AU - Yoshikawa, Akira

AU - Kamada, Kei

AU - Nikl, Martin

PY - 2017/6/15

Y1 - 2017/6/15

N2 - Praseodymium-doped (Gd2Y)(Ga3Al2)O12 (GYGAG: Pr) single crystals are grown by the micro-pulling down method with different Pr concentrations. The energy transfer process between Pr3+ and Gd3+ is investigated by photoluminescence excitation (PLE) and emission (PL) spectra measurements. Photoelectron yield measurements are carried out using photomultiplier. At 662 keV γ-rays, photoelectron yield of 2520 phe/MeV obtained for the GYGAG: Pr (0.01%) sample is larger than that of 1810 phe/MeV obtained for BGO crystal. Light yield degradation for the GYGAG: Pr scintillators is presumably due to the energy transfer from 5d state of Pr3+ to 4f state of Gd3+ together with the concentration quenching in the Gd3+-sublattice.

AB - Praseodymium-doped (Gd2Y)(Ga3Al2)O12 (GYGAG: Pr) single crystals are grown by the micro-pulling down method with different Pr concentrations. The energy transfer process between Pr3+ and Gd3+ is investigated by photoluminescence excitation (PLE) and emission (PL) spectra measurements. Photoelectron yield measurements are carried out using photomultiplier. At 662 keV γ-rays, photoelectron yield of 2520 phe/MeV obtained for the GYGAG: Pr (0.01%) sample is larger than that of 1810 phe/MeV obtained for BGO crystal. Light yield degradation for the GYGAG: Pr scintillators is presumably due to the energy transfer from 5d state of Pr3+ to 4f state of Gd3+ together with the concentration quenching in the Gd3+-sublattice.

KW - A1.Luminescence

KW - A1.Photoelectron yield

KW - A1.Scintillation

KW - B1.(GdY)(GaAl)O:Pr

UR - http://www.scopus.com/inward/record.url?scp=85008657289&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008657289&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.10.018

DO - 10.1016/j.jcrysgro.2016.10.018

M3 - Article

AN - SCOPUS:85008657289

VL - 468

SP - 369

EP - 372

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -