TY - JOUR
T1 - LP-MOCVD growth of CuAlSe2 epitaxial layers
AU - Chichibu, S.
AU - Iwai, A.
AU - Matsumoto, S.
AU - Higuchi, H.
N1 - Funding Information:
The authors would like to thank Benkan Corporation for the support of many super-clean parts in producing the MOCVD apparatus. They also want to acknowledge S. Hachiya of Trichem-ical Laboratory, K. Hirahara of Shin-Etsu Chemical Co., Ltd., and H. Sakurada of Tomoe Shokai Co., Ltd., for the help in purchasing metalorganic precursors. The authors are grateful to Y. Takaoka, T. Mitani, and M. Sakurazawa for EPMA, TEM and EDX, and SIMS measurements, respectively. They would also like to thank F. Ishihara and H. Uji for their contribution of fabricating the specimen for TEM observations. Drs. A. Kamata, H. Yoshida, and M. Kushibe of Toshiba Corporation are acknowledged for helpful discussions. This work has been partly supported by a Grant-in-Aid for JSPS fellows.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1993/2/1
Y1 - 1993/2/1
N2 - Epitaxial growth of CuAlSe2 has been performed on GaAs and GaP substrates by LP-MOCVD technique using cyclopentadienylcoppertriethylphosphine, trimethylaluminum, and dimethylselenium as respective Cu, Al, and Se precursors. Growth orientation of CuAlSe2 depends on the substrate orientation, i.e., the epitaxial layers are oriented toward the appropriate direction which has the smallest lattice mismatch. The carbon incorporation from trimethylaluminium has been reduced by increasing the growth temperature and by increasing the dimethylselenium molar flow rate. The carbon incorporation has also been reduced about one order of magnitude by using the new Al precursor, ethyldimethylaminealane. The epitaxial layers have shown red, broad photoluminescence at 77K.
AB - Epitaxial growth of CuAlSe2 has been performed on GaAs and GaP substrates by LP-MOCVD technique using cyclopentadienylcoppertriethylphosphine, trimethylaluminum, and dimethylselenium as respective Cu, Al, and Se precursors. Growth orientation of CuAlSe2 depends on the substrate orientation, i.e., the epitaxial layers are oriented toward the appropriate direction which has the smallest lattice mismatch. The carbon incorporation from trimethylaluminium has been reduced by increasing the growth temperature and by increasing the dimethylselenium molar flow rate. The carbon incorporation has also been reduced about one order of magnitude by using the new Al precursor, ethyldimethylaminealane. The epitaxial layers have shown red, broad photoluminescence at 77K.
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U2 - 10.1016/0022-0248(93)90814-D
DO - 10.1016/0022-0248(93)90814-D
M3 - Article
AN - SCOPUS:0027540401
VL - 126
SP - 635
EP - 642
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -