Lowering of effective work function induced by metal carbide/HfO2 interface dipole for advanced CMOS

Wataru Mizubayashi, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Kazuhiko Endo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the origin of the voltage shift induced by metal carbide (MeC)/HfO2 interface as metal gates in a Si or Ge channel for advanced CMOS. In the MeC/HfO2 gate stacks, the oxidation reaction occurs at the MeC/HfO2 interface, inducing electron transfer from HfO2 to MeC, resulting in the generation of dipole at the MeC/HfO2 interface. It was found that the MeC/HfO2 interface dipole causes a negative voltage shift of about -0.4 V regardless of metal atoms. Thus, the effective work function of MeC in a metal/high-k gate stack structure can be lowered by the negative voltage shift induced by the MeC/HfO2 interface dipole.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-126
Number of pages4
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Externally publishedYes
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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