Lowerature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation

Z. J. Wang; Z. P. Cao; Y. Otsuka; Noboru Yoshikawa; Hiroyuki Kokawa; S. Taniguchi

doi:10.1063/1.2938876

Lowerature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation

Z. J. Wang, Z. P. Cao, Y. Otsuka, Noboru Yoshikawa, Hiroyuki Kokawa, S. Taniguchi

Research output: Contribution to journal › Article

36 Citations (Scopus)

Abstract

Pb (Zr_xTi_1-x)O₃ (PZT) thin films were coated on PtTiSiO₂Si substrates by the sol-gel method and then crystallized by using the magnetic field of 2.45 GHz microwave irradiation. The elevated temperature generated by microwave irradiation used to obtain the perovskite phase was only 450 °C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave irradiation showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600 °C. It is clear that single-mode 2.45 GHz microwave irradiation in the microwave magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

Original language	English
Article number	222905
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2938876
Publication status	Published - 2008 Jun 13

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Wang, Z. J., Cao, Z. P., Otsuka, Y., Yoshikawa, N., Kokawa, H., & Taniguchi, S. (2008). Lowerature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation. Applied Physics Letters, 92(22), [222905]. https://doi.org/10.1063/1.2938876

@article{339be4e5a8b14938971f76afc486a0dd,

title = "Lowerature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation",

abstract = "Pb (ZrxTi1-x)O3 (PZT) thin films were coated on PtTiSiO2Si substrates by the sol-gel method and then crystallized by using the magnetic field of 2.45 GHz microwave irradiation. The elevated temperature generated by microwave irradiation used to obtain the perovskite phase was only 450 °C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave irradiation showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600 °C. It is clear that single-mode 2.45 GHz microwave irradiation in the microwave magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.",

author = "Wang, {Z. J.} and Cao, {Z. P.} and Y. Otsuka and Noboru Yoshikawa and Hiroyuki Kokawa and S. Taniguchi",

year = "2008",

month = jun,

day = "13",

doi = "10.1063/1.2938876",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Lowerature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation

AU - Wang, Z. J.

AU - Cao, Z. P.

AU - Otsuka, Y.

AU - Yoshikawa, Noboru

AU - Kokawa, Hiroyuki

AU - Taniguchi, S.

PY - 2008/6/13

Y1 - 2008/6/13

N2 - Pb (ZrxTi1-x)O3 (PZT) thin films were coated on PtTiSiO2Si substrates by the sol-gel method and then crystallized by using the magnetic field of 2.45 GHz microwave irradiation. The elevated temperature generated by microwave irradiation used to obtain the perovskite phase was only 450 °C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave irradiation showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600 °C. It is clear that single-mode 2.45 GHz microwave irradiation in the microwave magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

AB - Pb (ZrxTi1-x)O3 (PZT) thin films were coated on PtTiSiO2Si substrates by the sol-gel method and then crystallized by using the magnetic field of 2.45 GHz microwave irradiation. The elevated temperature generated by microwave irradiation used to obtain the perovskite phase was only 450 °C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave irradiation showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600 °C. It is clear that single-mode 2.45 GHz microwave irradiation in the microwave magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.

UR - http://www.scopus.com/inward/record.url?scp=44849128164&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44849128164&partnerID=8YFLogxK

U2 - 10.1063/1.2938876

DO - 10.1063/1.2938876

M3 - Article

AN - SCOPUS:44849128164

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 222905

ER -