Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM

T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano, S. Takahashi, M. Nakayama, N. Shimomura, H. Aikawa, S. Ikegawa, S. Yuasa, K. Yakushiji, H. Kubota, A. Fukushima, M. OoganeT. Miyazaki, K. Ando

Research output: Chapter in Book/Report/Conference proceedingConference contribution

133 Citations (Scopus)

Abstract

We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50nm-diameter. A L10-crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Kishi, T., Yoda, H., Kai, T., Nagase, T., Kitagawa, E., Yoshikawa, M., Nishiyama, K., Daibou, T., Nagamine, M., Amano, M., Takahashi, S., Nakayama, M., Shimomura, N., Aikawa, H., Ikegawa, S., Yuasa, S., Yakushiji, K., Kubota, H., Fukushima, A., ... Ando, K. (2008). Lower-current and fast switching of A perpendicular TMR for high speed and high density spin-transfer-torque MRAM. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796680] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796680