TY - JOUR
T1 - Low write-current magnetic random access memory cell with anisotropy-varied free layers
AU - Fukami, Shunsuke
AU - Honjo, Hiroaki
AU - Suzuki, T.
AU - Ishiwata, N.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - We propose a magnetic random access memory (MRAM) cell that utilizes field-induced switching and is applicable to high-speed memories. The MRAM cell, called the shape-varying MRAM cell, has three free layers, each having different shapes and functions, and achieves low write-current switching with high thermal stability and high external field robustness. We show analytically that one of the layers contributes to the low write-current switching and another contributes to the thermal stability. We also show the results of a micromagnetic simulation, in which write current of <0.5 mA, write time of <2 ns, energy barrier (ΔE/ kB T) >100, and external field robustness of >32 Oe were obtained.
AB - We propose a magnetic random access memory (MRAM) cell that utilizes field-induced switching and is applicable to high-speed memories. The MRAM cell, called the shape-varying MRAM cell, has three free layers, each having different shapes and functions, and achieves low write-current switching with high thermal stability and high external field robustness. We show analytically that one of the layers contributes to the low write-current switching and another contributes to the thermal stability. We also show the results of a micromagnetic simulation, in which write current of <0.5 mA, write time of <2 ns, energy barrier (ΔE/ kB T) >100, and external field robustness of >32 Oe were obtained.
UR - http://www.scopus.com/inward/record.url?scp=58149236505&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=58149236505&partnerID=8YFLogxK
U2 - 10.1063/1.3032894
DO - 10.1063/1.3032894
M3 - Article
AN - SCOPUS:58149236505
VL - 104
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
M1 - 113901
ER -