Low work function LaB6 thin films prepared by nitrogen doped LaB6 target sputtering

H. Ishii, K. Takahashi, T. Goto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Sputtering deposition of LaB6 thin film was developed, and work function of the sputtered LaB6 film was investigated. It was found that the work function depends greatly on the nitrogen and the oxygen concentrations in the LaB6 sputtering target. Low work function of 2.4 eV was obtained in the case of nitrogen concentration of approximately 0.4%. At the same time, the oxygen concentration must be less than 1% to obtain low work function. In this condition, the it was found from the Hall measurement results that the sputtered LaB6 film exhibited both the highest electron mobility (1.5 cm2/Vs) and the highest electron density (3.3×1022 cm-3), suggesting that orderliness between atoms was improved at this condition, resulting in the realization of low work function.

Original languageEnglish
Title of host publicationSolid State Topics General Session
EditorsK. B. Sundaram, O. M. Leonte, G. W. Hunter, K. Shimamura, H. Iwai
PublisherElectrochemical Society Inc.
Pages23-28
Number of pages6
Edition41
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
EventSymposium on Solid State Topics General Session - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number41
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Solid State Topics General Session - 227th ECS Meeting
CountryUnited States
CityChicago
Period15/5/2415/5/28

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Low work function LaB<sub>6</sub> thin films prepared by nitrogen doped LaB<sub>6</sub> target sputtering'. Together they form a unique fingerprint.

Cite this