Low work function between erbium suicide and n-type silicon controlled by cap film stress

Hiroaki Tanaka; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1149/1.3700902

Low work function between erbium suicide and n-type silicon controlled by cap film stress

Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The electrical and physical properties of W capped ErSi_x on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSi_x crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSi_x can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	371-378
Number of pages	8
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700902
Publication status	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

ASJC Scopus subject areas

Engineering(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3700902

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Tanaka, H., Teramoto, A., Sugawa, S., & Ohmi, T. (2012). Low work function between erbium suicide and n-type silicon controlled by cap film stress. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 371-378). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700902

Low work function between erbium suicide and n-type silicon controlled by cap film stress. / Tanaka, Hiroaki; Teramoto, Akinobu; Sugawa, Shigetoshi et al.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 371-378 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, H, Teramoto, A, Sugawa, S & Ohmi, T 2012, Low work function between erbium suicide and n-type silicon controlled by cap film stress. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 371-378, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700902

Tanaka H, Teramoto A, Sugawa S, Ohmi T. Low work function between erbium suicide and n-type silicon controlled by cap film stress. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 371-378. (ECS Transactions; 3). doi: 10.1149/1.3700902

Tanaka, Hiroaki ; Teramoto, Akinobu ; Sugawa, Shigetoshi et al. / Low work function between erbium suicide and n-type silicon controlled by cap film stress. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 371-378 (ECS Transactions; 3).

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abstract = "The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSix can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.",

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AB - The electrical and physical properties of W capped ErSix on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSix crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSix can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

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Low work function between erbium suicide and n-type silicon controlled by cap film stress

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