Low work function between erbium suicide and n-type silicon controlled by cap film stress

Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The electrical and physical properties of W capped ErSi x on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSi x crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSi x can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages371-378
Number of pages8
Edition3
DOIs
Publication statusPublished - 2012 Nov 19
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number3
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12/5/612/5/10

ASJC Scopus subject areas

  • Engineering(all)

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