@inproceedings{9b66c16c46e7461dafb870ec1486606d,
title = "Low work function between erbium suicide and n-type silicon controlled by cap film stress",
abstract = "The electrical and physical properties of W capped ErSi x on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSi x crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSi x can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.",
author = "Hiroaki Tanaka and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",
year = "2012",
month = nov,
day = "19",
doi = "10.1149/1.3700902",
language = "English",
isbn = "9781566779555",
series = "ECS Transactions",
number = "3",
pages = "371--378",
booktitle = "Dielectrics for Nanosystems 5",
edition = "3",
note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",
}