Low work function between erbium suicide and n-type silicon controlled by cap film stress

Hiroaki Tanaka; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1149/1.3700902

Low work function between erbium suicide and n-type silicon controlled by cap film stress

Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The electrical and physical properties of W capped ErSi _x on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSi _x crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSi _x can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages	371-378
Number of pages	8
Edition	3
DOIs	https://doi.org/10.1149/1.3700902
Publication status	Published - 2012 Nov 19
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 2012 May 6 → 2012 May 10

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country	United States
City	Seattle, WA
Period	12/5/6 → 12/5/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3700902

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Tanaka, H., Teramoto, A., Sugawa, S., & Ohmi, T. (2012). Low work function between erbium suicide and n-type silicon controlled by cap film stress. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 371-378). (ECS Transactions; Vol. 45, No. 3). https://doi.org/10.1149/1.3700902

Low work function between erbium suicide and n-type silicon controlled by cap film stress. / Tanaka, Hiroaki; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. 2012. p. 371-378 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, H, Teramoto, A, Sugawa, S & Ohmi, T 2012, Low work function between erbium suicide and n-type silicon controlled by cap film stress. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, pp. 371-378, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 12/5/6. https://doi.org/10.1149/1.3700902

Tanaka H, Teramoto A, Sugawa S, Ohmi T. Low work function between erbium suicide and n-type silicon controlled by cap film stress. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. 2012. p. 371-378. (ECS Transactions; 3). https://doi.org/10.1149/1.3700902

Tanaka, Hiroaki ; Teramoto, Akinobu ; Sugawa, Shigetoshi ; Ohmi, Tadahiro. / Low work function between erbium suicide and n-type silicon controlled by cap film stress. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. 2012. pp. 371-378 (ECS Transactions; 3).

@inproceedings{9b66c16c46e7461dafb870ec1486606d,

title = "Low work function between erbium suicide and n-type silicon controlled by cap film stress",

abstract = "The electrical and physical properties of W capped ErSi x on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSi x crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSi x can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.",

author = "Hiroaki Tanaka and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2012",

month = nov,

day = "19",

doi = "10.1149/1.3700902",

language = "English",

isbn = "9781566779555",

series = "ECS Transactions",

number = "3",

pages = "371--378",

booktitle = "Dielectrics for Nanosystems 5",

edition = "3",

note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

}

TY - GEN

T1 - Low work function between erbium suicide and n-type silicon controlled by cap film stress

AU - Tanaka, Hiroaki

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2012/11/19

Y1 - 2012/11/19

N2 - The electrical and physical properties of W capped ErSi x on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSi x crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSi x can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

AB - The electrical and physical properties of W capped ErSi x on n-type Si(100), Si(111) and Si(551) surfaces are reported. The Schottky barrier heights (SBHs) are not determined by the growth of the ErSi x crystal orientations, but are determined by the silicon surface orientations. And the SBHs are changed by the ratio of W capping layer thickness and ErSix thickness. These results are considered that the work function of ErSi x can be controlled by the stress during the silicidation. These silicidation reactions are very important to develop the future high current drivability devices using any surface orientation.

UR - http://www.scopus.com/inward/record.url?scp=84869031283&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869031283&partnerID=8YFLogxK

U2 - 10.1149/1.3700902

DO - 10.1149/1.3700902

M3 - Conference contribution

AN - SCOPUS:84869031283

SN - 9781566779555

T3 - ECS Transactions

SP - 371

EP - 378

BT - Dielectrics for Nanosystems 5

T2 - 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting

Y2 - 6 May 2012 through 10 May 2012

ER -