Low-voltage organic transistor with subfemtoliter inkjet source–drain contacts

Tomoyuki Yokota, Tsuyoshi Sekitani, yu Kato, Kazunori Kuribara, Ute Zschieschang, Hagen Klauk, Tatsuya Yamamoto, Kazuo Takimiya, Hirokazu Kuwabara, Masaaki Ikeda, Takao Someya

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 µm and a channel length of 1 µm were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a single-molecule self-assembled monolayer-based gate dielectric. On reducing the droplet volume (0.5 fl) ejected from the inkjet nozzle, which reduces sintering temperatures down to 90 °C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.

Original languageEnglish
Pages (from-to)3-6
Number of pages4
JournalMRS Communications
Volume1
Issue number1
DOIs
Publication statusPublished - 2011 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)

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