Low voltage operating organic light emitting transistors with efficient charge blocking layer

Alexandre Bachelet, Marion Chabot, Abduleziz Ablat, Kazuo Takimiya, Lionel Hirsch, Mamatimin Abbas

Research output: Contribution to journalArticlepeer-review

Abstract

Charge injection/blocking layers play important roles in the performances of organic electronic devices. Their incorporation into organic light emitting transistors has been limitted, due to generally high operating voltages (above 60 V) of these devices. In this work, two hole blocking molecules are integrated into tris-(8-hydroxyquinoline) aluminum (Alq3) based light emitting transistors under operating voltage as low as 5 V. The effects of hole blocking and electron injection are decoupled through the differences in the energy levels. Significantly improved optical performance is achieved with the molecule of suitable energy level for electron injection. Surprisingly, a decreased performance is observed in the case of another hole blocking molecule evidencing that charge injection overweighs charge blocking in this device architecture.

Original languageEnglish
Article number106024
JournalOrganic Electronics
Volume88
DOIs
Publication statusPublished - 2021 Jan

Keywords

  • Hole blocking layer
  • Low voltage operation
  • Organic light emitting transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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