Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi; Hiroyuki Sakurai; Tatsufumi Isogai; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1080/10584580600657906

Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi, Hiroyuki Sakurai, Tatsufumi Isogai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

Abstract

We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO 2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO 2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.

Original language	English
Pages (from-to)	47-55
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	81
Issue number	1
DOIs	https://doi.org/10.1080/10584580600657906
Publication status	Published - 2006 Nov 1

Keywords

Crystallization of ferroelectric on SiO
Ferroelectric multi-layer stack MFIS structure
Oxygen radical treatment

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584580600657906

Cite this

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title = "Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment",

abstract = "We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO 2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO 2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.",

keywords = "Crystallization of ferroelectric on SiO, Ferroelectric multi-layer stack MFIS structure, Oxygen radical treatment",

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T1 - Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment

AU - Takahashi, Ichirou

AU - Sakurai, Hiroyuki

AU - Isogai, Tatsufumi

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2006/11/1

Y1 - 2006/11/1

N2 - We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO 2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO 2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.

AB - We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO 2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO 2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.

KW - Crystallization of ferroelectric on SiO

KW - Ferroelectric multi-layer stack MFIS structure

KW - Oxygen radical treatment

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Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment

Abstract

Keywords

ASJC Scopus subject areas

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