Abstract
We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO 2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO 2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.
Original language | English |
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Pages (from-to) | 47-55 |
Number of pages | 9 |
Journal | Integrated Ferroelectrics |
Volume | 81 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2006 Nov 1 |
Keywords
- Crystallization of ferroelectric on SiO
- Ferroelectric multi-layer stack MFIS structure
- Oxygen radical treatment
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry