Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment

Ichirou Takahashi, Hiroyuki Sakurai, Tatsufumi Isogai, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

Abstract

We have successfully developed a technology that crystallizes a thin ferroelectric film on an insulator such as SiO 2 directly. A very thin (100 nm) and low dielectric constant ferroelectric Sr 2 (Ta 1-x ,Nb x ) 2 O 7 (STN, x = 0.3) film with high ferroelectric performance has been formed on SiO 2 by repeating the 5 nm STN deposition and oxygen radical treatment 20 times. Using this technology, 3 V operation of the ferroelectric multi-layer stack MFIS (FMLS-MFIS) structure device has been successfully achieved and 0.4 V memory window of the C-V hysteresis curve is obtained. More than 3 days retention time can be obtained under 3 V operation.

Original languageEnglish
Pages (from-to)47-55
Number of pages9
JournalIntegrated Ferroelectrics
Volume81
Issue number1
DOIs
Publication statusPublished - 2006 Nov 1

Keywords

  • Crystallization of ferroelectric on SiO
  • Ferroelectric multi-layer stack MFIS structure
  • Oxygen radical treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Low voltage 3 V operation of ferroelectric multi-layer stack MFIS structure device formed by plasma physical vapor deposition and oxygen radical treatment'. Together they form a unique fingerprint.

Cite this