Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings

H. Yamada, T. Sasaki, S. Takano, T. Numai, M. Kitamura, I. Mito

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.

Original languageEnglish
Pages (from-to)147-149
Number of pages3
JournalElectronics Letters
Volume24
Issue number3
DOIs
Publication statusPublished - 1988 Jan 1
Externally publishedYes

Keywords

  • Semiconductor growth
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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