Abstract
l.55 μm GalnAsP/lnP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21W/A differential quantum efficiency were also attained under single longitudinal mode operation.
| Original language | English |
|---|---|
| Pages (from-to) | 147-149 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 24 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1988 Jan 1 |
| Externally published | Yes |
Keywords
- Semiconductor growth
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Yamada, H., Sasaki, T., Takano, S., Numai, T., Kitamura, M., & Mito, I. (1988). Low Threshold Operation of 1.55 μm GalnAsP/lnP Dfb-Bh Lds Entirely Grown by Movpe on Inp Gratings. Electronics Letters, 24(3), 147-149. https://doi.org/10.1049/el:19880098