Low-temperature transport of excitons in type-II GaAs/AlAs quantum wells

Alexander B. Dzyubenko, Gerrit E.W. Bauer

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Low-temperature transport of two-dimensional excitons in type-II GaAs/AlAs double quantum wells (DQW's) with rough interfaces is considered. The limiting cases of zero magnetic field and the magnetic quantum limit are studied. We found that (1) the transport of excitons in DQW's is mainly limited by the disorder at the external interfaces and (2) the transport relaxation time τ depends nonmonotonously on the quantum-well widths for electrons (AlAs QW) and holes (GaAs QW). In the magnetic quantum limit the exciton transport relaxation time decreases with magnetic field strength B approximately as τ∼B-1/2.

Original languageEnglish
Pages (from-to)14524-14531
Number of pages8
JournalPhysical Review B
Volume51
Issue number20
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Low-temperature transport of excitons in type-II GaAs/AlAs quantum wells'. Together they form a unique fingerprint.

Cite this