Low-Temperature Thermal-Oxidation of Silicon

Yasutaka Uchida, Jin Hai Yue, Fumihiro Kamase, Takayuki Suzuki, Takeo Hattori, Masakiyo Matsumura

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)


    A native silicon-oxide layer has been thermally grown at 250°C by using a nitric and sulfuric acid mixture in a liquid phase under high-pressure conditions. It was found that the grown oxide layer was mainly of silicon-dioxide; however, the density of intermediate oxide was higher than that in a conventional and a thermally-grown oxide layer. The resistivity and the breakdown field strength of the oxide layer were more than 1014 Ώm and 4 MV/cm, respectively. The interface state density, evaluated from high-frequency C-V characteristics, showed a V-shaped distribution and its minimum value was about 1011/cm2eV.

    Original languageEnglish
    Pages (from-to)1633-1639
    Number of pages7
    JournalJapanese journal of applied physics
    Issue number11
    Publication statusPublished - 1986 Nov

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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