TY - JOUR
T1 - Low-Temperature Thermal-Oxidation of Silicon
AU - Uchida, Yasutaka
AU - Yue, Jin Hai
AU - Kamase, Fumihiro
AU - Suzuki, Takayuki
AU - Hattori, Takeo
AU - Matsumura, Masakiyo
PY - 1986/11
Y1 - 1986/11
N2 - A native silicon-oxide layer has been thermally grown at 250°C by using a nitric and sulfuric acid mixture in a liquid phase under high-pressure conditions. It was found that the grown oxide layer was mainly of silicon-dioxide; however, the density of intermediate oxide was higher than that in a conventional and a thermally-grown oxide layer. The resistivity and the breakdown field strength of the oxide layer were more than 1014 Ώm and 4 MV/cm, respectively. The interface state density, evaluated from high-frequency C-V characteristics, showed a V-shaped distribution and its minimum value was about 1011/cm2eV.
AB - A native silicon-oxide layer has been thermally grown at 250°C by using a nitric and sulfuric acid mixture in a liquid phase under high-pressure conditions. It was found that the grown oxide layer was mainly of silicon-dioxide; however, the density of intermediate oxide was higher than that in a conventional and a thermally-grown oxide layer. The resistivity and the breakdown field strength of the oxide layer were more than 1014 Ώm and 4 MV/cm, respectively. The interface state density, evaluated from high-frequency C-V characteristics, showed a V-shaped distribution and its minimum value was about 1011/cm2eV.
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U2 - 10.1143/JJAP.25.1633
DO - 10.1143/JJAP.25.1633
M3 - Article
AN - SCOPUS:0022806454
VL - 25
SP - 1633
EP - 1639
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11
ER -