TY - JOUR
T1 - Low-temperature SOI (Si-on-insulator) formation by lateral solid-phase epitaxy
AU - Miyao, M.
AU - Moniwa, Masahiro
AU - Kusukawa, K.
AU - Sinke, W.
PY - 1988/12/1
Y1 - 1988/12/1
N2 - Low-temperature (550-600 °C) formation of a Si-on-insulator structure by a solid-phase process is investigated. A microprobe (μ) reflection high-energy electron diffraction observation reveals that oriented crystal growth propagates from the seeding area in solid-phase epitaxy (SPE). The effects of random nucleation, epitaxial alignment, and local doping on lateral (L)-SPE are examined. As a result, a relatively large L-SPE area, 14 μm from the seeding area, is achieved on insulating regions. Crystal quality and electrical properties of L-SPE layers are examined using μ-Raman spectroscopy and field-effect transistor fabrication. A small stress field, 2.5×109 dyn/cm2, and high electron mobility, 720 cm2/V s, comparable to that of bulk Si are obtained.
AB - Low-temperature (550-600 °C) formation of a Si-on-insulator structure by a solid-phase process is investigated. A microprobe (μ) reflection high-energy electron diffraction observation reveals that oriented crystal growth propagates from the seeding area in solid-phase epitaxy (SPE). The effects of random nucleation, epitaxial alignment, and local doping on lateral (L)-SPE are examined. As a result, a relatively large L-SPE area, 14 μm from the seeding area, is achieved on insulating regions. Crystal quality and electrical properties of L-SPE layers are examined using μ-Raman spectroscopy and field-effect transistor fabrication. A small stress field, 2.5×109 dyn/cm2, and high electron mobility, 720 cm2/V s, comparable to that of bulk Si are obtained.
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U2 - 10.1063/1.341565
DO - 10.1063/1.341565
M3 - Article
AN - SCOPUS:0000943307
VL - 64
SP - 3018
EP - 3023
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
ER -