Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (ii)–in situ uvoc

Tetsuya Kaneko, Maki Suemitsu, Nobuo Miyamoto

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

A new method to obtain clean silicon surfaces using a thermal treatment at as low as 700°C is proposed. The method consists of an ex situ treatment of HF dipping followed by a rinse in distilled, deionized water and in situ treatments of both UVOC under low oxygen pressure and annealing in vacuo. From the Arrhenius plot of the removal rate of the surface oxide, two mechanisms corresponding to a diffusion of the volatile product, SiO, and a reaction between oxygen and silicon are suggested to exist, with activation energies 3.7 eV and 1.9 eV, respectively.

Original languageEnglish
Pages (from-to)2425-2429
Number of pages5
JournalJapanese journal of applied physics
Volume28
Issue number12 R
DOIs
Publication statusPublished - 1989 Dec

Keywords

  • HF treatment
  • RHEED
  • Silicon
  • Surface cleaning
  • UVOC

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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