Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (i) “optimization of the hf treatment”

Maki Suemitsu, Tetsuya Kaneko, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

High-quality p-type a SiC films can be fabricated by using a new type of doping gas, B(CH3)3, instead of B2H6 in a photo-CVD method and a glow discharge method. The photoconductivity and doping efficiency of a-SiC films fabricated by the photo-CVD method are improved by using B(CH3)3. A reduction of tail state density and an increase in photoluminescence are also observed. Furthermore, a bandgap narrowing in highly B-doped a-SiC films fabricated by the glow discharge method can be prevented by using B(CH3)3. A conversion efficiency of 10.0% (total area efficiency of 9.02%) is obtained for a 100 cm2 integrated-type a-Si solar cell whose p-layer was fabricated by the glow discharge method with B(CH3)3.

Original languageEnglish
Pages (from-to)2436-2440
Number of pages5
JournalJapanese journal of applied physics
Volume28
Issue number12 R
DOIs
Publication statusPublished - 1989 Dec

Keywords

  • HF treatment
  • RHEED
  • Silicon
  • Surface cleaning
  • UVOC

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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