Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (i) “optimization of the hf treatment”

Maki Suemitsu; Tetsuya Kaneko; Nobuo Miyamoto

doi:10.1143/JJAP.28.2421

Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (i) “optimization of the hf treatment”

Maki Suemitsu, Tetsuya Kaneko, Nobuo Miyamoto

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

High-quality p-type a SiC films can be fabricated by using a new type of doping gas, B(CH₃)₃, instead of B₂H₆ in a photo-CVD method and a glow discharge method. The photoconductivity and doping efficiency of a-SiC films fabricated by the photo-CVD method are improved by using B(CH₃)₃. A reduction of tail state density and an increase in photoluminescence are also observed. Furthermore, a bandgap narrowing in highly B-doped a-SiC films fabricated by the glow discharge method can be prevented by using B(CH₃)₃. A conversion efficiency of 10.0% (total area efficiency of 9.02%) is obtained for a 100 cm² integrated-type a-Si solar cell whose p-layer was fabricated by the glow discharge method with B(CH₃)₃.

Original language	English
Pages (from-to)	2436-2440
Number of pages	5
Journal	Japanese journal of applied physics
Volume	28
Issue number	12 R
DOIs	https://doi.org/10.1143/JJAP.28.2421
Publication status	Published - 1989 Dec
Externally published	Yes

Keywords

HF treatment
RHEED
Silicon
Surface cleaning
UVOC

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.28.2421

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title = "Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (i) “optimization of the hf treatment”",

abstract = "High-quality p-type a SiC films can be fabricated by using a new type of doping gas, B(CH3)3, instead of B2H6 in a photo-CVD method and a glow discharge method. The photoconductivity and doping efficiency of a-SiC films fabricated by the photo-CVD method are improved by using B(CH3)3. A reduction of tail state density and an increase in photoluminescence are also observed. Furthermore, a bandgap narrowing in highly B-doped a-SiC films fabricated by the glow discharge method can be prevented by using B(CH3)3. A conversion efficiency of 10.0% (total area efficiency of 9.02%) is obtained for a 100 cm2 integrated-type a-Si solar cell whose p-layer was fabricated by the glow discharge method with B(CH3)3.",

keywords = "HF treatment, RHEED, Silicon, Surface cleaning, UVOC",

author = "Maki Suemitsu and Tetsuya Kaneko and Nobuo Miyamoto",

year = "1989",

month = dec,

doi = "10.1143/JJAP.28.2421",

language = "English",

volume = "28",

pages = "2436--2440",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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publisher = "Japan Society of Applied Physics",

number = "12 R",

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TY - JOUR

T1 - Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (i) “optimization of the hf treatment”

AU - Suemitsu, Maki

AU - Kaneko, Tetsuya

AU - Miyamoto, Nobuo

PY - 1989/12

Y1 - 1989/12

N2 - High-quality p-type a SiC films can be fabricated by using a new type of doping gas, B(CH3)3, instead of B2H6 in a photo-CVD method and a glow discharge method. The photoconductivity and doping efficiency of a-SiC films fabricated by the photo-CVD method are improved by using B(CH3)3. A reduction of tail state density and an increase in photoluminescence are also observed. Furthermore, a bandgap narrowing in highly B-doped a-SiC films fabricated by the glow discharge method can be prevented by using B(CH3)3. A conversion efficiency of 10.0% (total area efficiency of 9.02%) is obtained for a 100 cm2 integrated-type a-Si solar cell whose p-layer was fabricated by the glow discharge method with B(CH3)3.

AB - High-quality p-type a SiC films can be fabricated by using a new type of doping gas, B(CH3)3, instead of B2H6 in a photo-CVD method and a glow discharge method. The photoconductivity and doping efficiency of a-SiC films fabricated by the photo-CVD method are improved by using B(CH3)3. A reduction of tail state density and an increase in photoluminescence are also observed. Furthermore, a bandgap narrowing in highly B-doped a-SiC films fabricated by the glow discharge method can be prevented by using B(CH3)3. A conversion efficiency of 10.0% (total area efficiency of 9.02%) is obtained for a 100 cm2 integrated-type a-Si solar cell whose p-layer was fabricated by the glow discharge method with B(CH3)3.

KW - HF treatment

KW - RHEED

KW - Silicon

KW - Surface cleaning

KW - UVOC

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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IS - 12 R

ER -

Low temperature silicon surface cleaning by hf etching/ultraviolet ozone cleaning (hf/uvoc) method (i) “optimization of the hf treatment”

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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