Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

Junichi Murota, Naoto Nakamura, Manabu Kato, Nobuo Mikoshiba, Tadahiro Ohmi

Research output: Contribution to journalArticle

131 Citations (Scopus)

Abstract

An ultraclean hot-wall low-pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single-crystal Si and SiO 2 using ultraclean SiH4 and H2 gases in the temperature range 600-850°C under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on SiO 2 was found, and low-temperature Si selective deposition and epitaxy on Si were achieved without addition of HCl under deposition conditions where only nonselective polycrystalline Si growth could be obtained in conventional CVD systems.

Original languageEnglish
Pages (from-to)1007-1009
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number11
DOIs
Publication statusPublished - 1989 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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