Si epitaxial films were grown on Si without substrate heating by ultraclean ECR Ar plasma enhanced decomposition of SiH4. The transition from deposition to etching on Si and SiO2 was found to occur with the different H2 addition to the Ar plasma. Thus, selective deposition/etching can be achieved by selecting the amount of H2 gas addition even in plasma processing. Furthermore, when the plasma conditions were changed, the selective deposition modes were inverted from selective Si epitaxy on Si to selective Si film deposition on SiO2 only. The surface reaction is discussed based on the XPS analysis.
|Number of pages||3|
|Publication status||Published - 1991|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 1991 Aug 27 → 1991 Aug 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
ASJC Scopus subject areas