Low-temperature silicon epitaxy without substrate heating and selectivity inversion in ultraclean ECR plasma enhanced CVD

Takashi Matsuura, Junichi Murota, Tadahiro Ohmi, Shoichi Ono

Research output: Contribution to conferencePaperpeer-review

Abstract

Si epitaxial films were grown on Si without substrate heating by ultraclean ECR Ar plasma enhanced decomposition of SiH4. The transition from deposition to etching on Si and SiO2 was found to occur with the different H2 addition to the Ar plasma. Thus, selective deposition/etching can be achieved by selecting the amount of H2 gas addition even in plasma processing. Furthermore, when the plasma conditions were changed, the selective deposition modes were inverted from selective Si epitaxy on Si to selective Si film deposition on SiO2 only. The surface reaction is discussed based on the XPS analysis.

Original languageEnglish
Pages38-40
Number of pages3
DOIs
Publication statusPublished - 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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