Low-temperature scanning tunneling spectroscopy study of two-dimensional electron systems confined in semiconductor heterostructures

S. Perraud, K. Kanisawa, Z. Z. Wang, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Low-temperature scanning tunneling spectroscopy under ultra-high vacuum was employed to investigate the two-dimensional electron system at the epitaxial surface of Sidoped In0.53Ga0.47As/In0.52Al 0.48As(111)A quantum-well structures. The electron density in the near-surface region of the quantum well could be controlled through modulation doping. Spectra of the electronic local density of states in the conduction band showed a clear step-like energy dependence that reveals the subband states. In spectra acquired at some areas of nanometer size, peaks were observed near subband minima, indicating the existence of bound states.

Original languageEnglish
Article number184
Pages (from-to)926-930
Number of pages5
JournalJournal of Physics: Conference Series
Volume61
Issue number1
DOIs
Publication statusPublished - 2007 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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