Low-temperature resistivity and susceptibility of the low-carrier density, one-dimensional S = 1/2 antiferromagnet Yb₄As₃

We report on low-T (T ≥ 0.02K) measurements of the electrical resistivity, p(T, B), and the magnetic AC-susceptibility, Χ_ac (T, B), on the low-carrier density, one-dimensional S = 1/2 antiferromagnet Yb ₄As₃ in magnetic fields B ≤ 19 T. For 2 K ≤ T ≤ 20K we find ρ - ρ₀ = AT² (ρ₀: residual resistivity), with a large coefficient A ≈ 0.75 μΩcm/K ² followed by a minimum around 1K and a 0.1 % increase for T → 0. In finite fields and below about 5 K, ρ(T, B) shows a historydependent hysteretic behavior. The oscillatory behavior superimposed is attributed to the Shubnikov-de Haas effect arising from a low density of mobile As-p holes. For T ≥ 0.4 K, Χ_ac (T) follows the prediction of the quantum sine-Gordon model. A cusp-like anomaly is found at 0.15 K.