Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and ar environment

Kaichiro Minami, Atsushi Moriya, Kazuhiro Yuasa, Kiyohiko Maeda, Masayuki Yamada, Yasuo Kunii, Michio Niwano, Junichi Murota

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Introduction of Ge into ULSIs has become increasingly attractive for the fabrication of high-performance ultrasmall devices because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in clean room air, the control of formation and reduction of Ge oxide is largely important. In this work, the formation of Ge oxide on Ge in cleanroom air and the reduction of Ge oxide by Si on Si substrate and by SiH4 have been investigated.

Original languageEnglish
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages151-152
Number of pages2
ISBN (Print)9781479954285
DOIs
Publication statusPublished - 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: 2014 Jun 22014 Jun 4

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period14/6/214/6/4

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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