Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and ar environment

Kaichiro Minami; Atsushi Moriya; Kazuhiro Yuasa; Kiyohiko Maeda; Masayuki Yamada; Yasuo Kunii; Michio Niwano; Junichi Murota

doi:10.1109/ISTDM.2014.6874672

Low-temperature reduction of Ge oxide by Si and SiH₄ in low-pressure H₂ and ar environment

Kaichiro Minami, Atsushi Moriya, Kazuhiro Yuasa, Kiyohiko Maeda, Masayuki Yamada, Yasuo Kunii, Michio Niwano, Junichi Murota

Human Information Systems Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Introduction of Ge into ULSIs has become increasingly attractive for the fabrication of high-performance ultrasmall devices because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in clean room air, the control of formation and reduction of Ge oxide is largely important. In this work, the formation of Ge oxide on Ge in cleanroom air and the reduction of Ge oxide by Si on Si substrate and by SiH₄ have been investigated.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	151-152
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874672
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: 2014 Jun 2 → 2014 Jun 4

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country	Singapore
City	Singapore
Period	14/6/2 → 14/6/4

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874672

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Minami, K., Moriya, A., Yuasa, K., Maeda, K., Yamada, M., Kunii, Y., Niwano, M., & Murota, J. (2014). Low-temperature reduction of Ge oxide by Si and SiH₄ in low-pressure H₂ and ar environment. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 151-152). [6874672] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874672

Low-temperature reduction of Ge oxide by Si and SiH₄ in low-pressure H₂ and ar environment. / Minami, Kaichiro; Moriya, Atsushi; Yuasa, Kazuhiro; Maeda, Kiyohiko; Yamada, Masayuki; Kunii, Yasuo; Niwano, Michio; Murota, Junichi.

2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 151-152 6874672 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Minami, K, Moriya, A, Yuasa, K, Maeda, K, Yamada, M, Kunii, Y, Niwano, M & Murota, J 2014, Low-temperature reduction of Ge oxide by Si and SiH₄ in low-pressure H₂ and ar environment. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874672, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 151-152, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 14/6/2. https://doi.org/10.1109/ISTDM.2014.6874672

Minami K, Moriya A, Yuasa K, Maeda K, Yamada M, Kunii Y et al. Low-temperature reduction of Ge oxide by Si and SiH₄ in low-pressure H₂ and ar environment. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 151-152. 6874672. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). https://doi.org/10.1109/ISTDM.2014.6874672

Minami, Kaichiro ; Moriya, Atsushi ; Yuasa, Kazuhiro ; Maeda, Kiyohiko ; Yamada, Masayuki ; Kunii, Yasuo ; Niwano, Michio ; Murota, Junichi. / Low-temperature reduction of Ge oxide by Si and SiH₄ in low-pressure H₂ and ar environment. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 151-152 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

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title = "Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and ar environment",

abstract = "Introduction of Ge into ULSIs has become increasingly attractive for the fabrication of high-performance ultrasmall devices because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in clean room air, the control of formation and reduction of Ge oxide is largely important. In this work, the formation of Ge oxide on Ge in cleanroom air and the reduction of Ge oxide by Si on Si substrate and by SiH4 have been investigated.",

author = "Kaichiro Minami and Atsushi Moriya and Kazuhiro Yuasa and Kiyohiko Maeda and Masayuki Yamada and Yasuo Kunii and Michio Niwano and Junichi Murota",

note = "Funding Information: This work was carried out in the Superclean Room of the Laboratory for the Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, and is partially supported by the JSPS Core-to-Core Program, Advanced Research Networks “International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration”. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.; 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 ; Conference date: 02-06-2014 Through 04-06-2014",

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AU - Minami, Kaichiro

AU - Moriya, Atsushi

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AU - Maeda, Kiyohiko

AU - Yamada, Masayuki

AU - Kunii, Yasuo

AU - Niwano, Michio

AU - Murota, Junichi

N1 - Funding Information: This work was carried out in the Superclean Room of the Laboratory for the Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, and is partially supported by the JSPS Core-to-Core Program, Advanced Research Networks “International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration”. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

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AB - Introduction of Ge into ULSIs has become increasingly attractive for the fabrication of high-performance ultrasmall devices because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in clean room air, the control of formation and reduction of Ge oxide is largely important. In this work, the formation of Ge oxide on Ge in cleanroom air and the reduction of Ge oxide by Si on Si substrate and by SiH4 have been investigated.

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