TY - GEN
T1 - Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and ar environment
AU - Minami, Kaichiro
AU - Moriya, Atsushi
AU - Yuasa, Kazuhiro
AU - Maeda, Kiyohiko
AU - Yamada, Masayuki
AU - Kunii, Yasuo
AU - Niwano, Michio
AU - Murota, Junichi
N1 - Funding Information:
This work was carried out in the Superclean Room of the Laboratory for the Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, and is partially supported by the JSPS Core-to-Core Program, Advanced Research Networks “International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration”.
PY - 2014
Y1 - 2014
N2 - Introduction of Ge into ULSIs has become increasingly attractive for the fabrication of high-performance ultrasmall devices because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in clean room air, the control of formation and reduction of Ge oxide is largely important. In this work, the formation of Ge oxide on Ge in cleanroom air and the reduction of Ge oxide by Si on Si substrate and by SiH4 have been investigated.
AB - Introduction of Ge into ULSIs has become increasingly attractive for the fabrication of high-performance ultrasmall devices because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in clean room air, the control of formation and reduction of Ge oxide is largely important. In this work, the formation of Ge oxide on Ge in cleanroom air and the reduction of Ge oxide by Si on Si substrate and by SiH4 have been investigated.
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U2 - 10.1109/ISTDM.2014.6874672
DO - 10.1109/ISTDM.2014.6874672
M3 - Conference contribution
AN - SCOPUS:84906696703
SN - 9781479954285
T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
SP - 151
EP - 152
BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PB - IEEE Computer Society
T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Y2 - 2 June 2014 through 4 June 2014
ER -