Low-temperature redistribution of As in Si during Ni silicide formation

I. Ohdomari, M. Akiyama, T. Maeda, M. Hori, C. Takebayashi, A. Ogura, T. Chikyo, I. Kimura, K. Yoneda, K. N. Tu

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35 Citations (Scopus)

Abstract

We have investigated the redistribution of implanted As during Ni 2Si formation at 275 and 300°C and NiSi formation at 400 to 700°C with neutron activation analysis and Hall effect measurement. Some of the implanted As atoms were found to redistribute themselves near the silicide-Si interface during both Ni2Si and NiSi formation. The depth of the redistribution extends about 100 Å into Si and is affected slightly by the formation temperature of NiSi. A fraction of the redistributed As is electrically active and the fraction increases with the annealing temperature. The maximum electrical activity of redistributed As during NiSi formation at 700°C is estimated to be 6.5%.

Original languageEnglish
Pages (from-to)2725-2728
Number of pages4
JournalJournal of Applied Physics
Volume56
Issue number10
DOIs
Publication statusPublished - 1984
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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