Abstract
We have investigated the redistribution of implanted As during Ni 2Si formation at 275 and 300°C and NiSi formation at 400 to 700°C with neutron activation analysis and Hall effect measurement. Some of the implanted As atoms were found to redistribute themselves near the silicide-Si interface during both Ni2Si and NiSi formation. The depth of the redistribution extends about 100 Å into Si and is affected slightly by the formation temperature of NiSi. A fraction of the redistributed As is electrically active and the fraction increases with the annealing temperature. The maximum electrical activity of redistributed As during NiSi formation at 700°C is estimated to be 6.5%.
Original language | English |
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Pages (from-to) | 2725-2728 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 56 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1984 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)