Low-Temperature Purification of Silicon by Dissolution and Solution Growth in Sodium Solvent

Haruhiko Morito, Taiki Karahashi, Masahito Uchikoshi, Minoru Isshiki, Hisanori Yamane

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

Efficient low-cost processes for solar-grade Si production are needed to overcome the deficiency in the supply of Si. We have demonstrated a new method for the purification of Si crystal. Low-purity Si powder was dissolved in a Na melt (solvent), and Si grains were crystallized by Na evaporation from the Na-Si solution at 1173 K. Glow discharge mass spectrometry analysis revealed that the concentrations of impurity elements, except Na and B, were decreased in the crystallized Si grain. In particular, the concentration of Fe which was mainly included in the Si powder decreased from 3200 ppm by mass to 1. 5 ppm by mass in a refined Si grain. Iron disilicide was crystallized from the solution before the crystallization of Si. It was suggested that impurities were reduced not only by crystallization from the Na-Si melt but also by the dissolution of Si into the melt. Na contaminating the refined Si grain was eliminated down to 0. 055 mass ppm by heating at 1723 K under vacuum.

Original languageEnglish
Pages (from-to)121-125
Number of pages5
JournalSilicon
Volume4
Issue number2
DOIs
Publication statusPublished - 2012 Apr

Keywords

  • Purification
  • Silicon
  • Sodium
  • Solution growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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