Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Takio Kizu; Shinya Aikawa; Nobuhiko Mitoma; Maki Shimizu; Xu Gao; Meng Fang Lin; Toshihide Nabatame; Kazuhito Tsukagoshi

doi:10.1063/1.4871511

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Takio Kizu, Shinya Aikawa, Nobuhiko Mitoma, Maki Shimizu, Xu Gao, Meng Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article

52 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low-temperature process (∼ 150 °C). By incorporating WO₃ into indium oxide, TFTs that were highly stable under a negative bias stress were reproducibly achieved without high-temperature annealing, and the degradation of the field-effect mobility was not pronounced. This may be due to the efficient suppression of the excess oxygen vacancies in the film by the high dissociation energy of the bond between oxygen and W atoms and to the different charge states of W ions.

Original language	English
Article number	152103
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4871511
Publication status	Published - 2014 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kizu, T., Aikawa, S., Mitoma, N., Shimizu, M., Gao, X., Lin, M. F., Nabatame, T., & Tsukagoshi, K. (2014). Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability. Applied Physics Letters, 104(15), [152103]. https://doi.org/10.1063/1.4871511

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AU - Lin, Meng Fang

AU - Nabatame, Toshihide

AU - Tsukagoshi, Kazuhito

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