Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Takio Kizu, Shinya Aikawa, Nobuhiko Mitoma, Maki Shimizu, Xu Gao, Meng Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low-temperature process (∼ 150 °C). By incorporating WO3 into indium oxide, TFTs that were highly stable under a negative bias stress were reproducibly achieved without high-temperature annealing, and the degradation of the field-effect mobility was not pronounced. This may be due to the efficient suppression of the excess oxygen vacancies in the film by the high dissociation energy of the bond between oxygen and W atoms and to the different charge states of W ions.

Original languageEnglish
Article number152103
JournalApplied Physics Letters
Volume104
Issue number15
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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