Low-temperature preparation of crystallized zirconia films by ECR plasma MOCVD

Hiroshi Masumoto, Takashi Goto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Zirconia (ZrO2) thin films were deposited at low temperatures on quartz and polyamidoimide substrates by electron cyclotron resonance (ECR) plasma MOCVD. Zr-hexa-fluoro-acetylacetonato [Zr(Hfac)4] solution was used as a precursor. Substrate temperature (Tsub) was from 300 to 973 K by a water-cooling holder and an infrared lamp heater. Cubic and monoclinic zirconia films were obtained on polyamidoimide substrates at 300 K. The ECR plasma was significantly effective to prepare crystallized ZrO 2 films at low temperatures.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages183-188
Number of pages6
Publication statusPublished - 2006 May 16
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume890
ISSN (Print)0272-9172

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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