Low-temperature physical properties of Ba 8Ni x Ge 46-x (x = 3, 4, 6)

Jingtao Xu, Jiazhen Wu, Satoshi Heguri, Gang Mu, Yoichi Tanabe, Katsumi Tanigaki

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Polycrystalline samples of type I clathrate Ba 8Ni x Ge 46-x (x = 3, 4, 6) have been synthesized using a radio-frequency (RF) induction furnace. Ba 8Ni x Ge 46-x samples show metallic-like behavior (dρ/dT > 0) with high resistivity at room temperature, and diamagnetic susceptibility at 2 K and 300 K. The charge carriers vary from n type to p type depending on the Ni stoichiometry. The carrier concentrations at 300 K are calculated to be 5.84(3) e -/cell for x = 3, 2.29(1) e -/cell for x = 4, and 3.29(1) h +/cell for x = 6. The deviation of the carrier concentrations from the values expected based on 4-bonded Ni suggests that vacancies may play a very important role in the electronic states. The effective carrier masses are estimated from the low-temperature heat capacity data.

Original languageEnglish
Pages (from-to)1177-1180
Number of pages4
JournalJournal of Electronic Materials
Volume41
Issue number6
DOIs
Publication statusPublished - 2012 Jun

Keywords

  • Clathrates
  • Zintl phase
  • specific heat
  • thermoelectric

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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