Low temperature oxidation of CVD SiC by electron cyclotron resonance plasma

Takashi Goto, Hiroshi Masumoto, Mineo Niizuma

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


The oxidation behavior in electron cyclotron resonance (ECR) plasma-enhanced oxygen plasma for Si- and C-faces of CVD SiC was studied at 398-873 K. In pure O2 gas, the oxidation kinetics are parabolic and logarithmic for the C- and Si-faces, respectively. Monolithic amorphous SiO2 layers were formed on the Si-face, but mixtures of outer SiO2 and inner Si-C-O layers were observed on the C-face. In an Ar-O2 gas mixture, there was no difference in oxidation behavior between Si- and C-faces. The oxidation kinetics were linear, and nano-meter size crystalline Si particles were found dispersed in the amorphous SiO2 layers.

Original languageEnglish
Pages (from-to)235-240
Number of pages6
JournalMaterials Chemistry and Physics
Issue number1-3
Publication statusPublished - 2002 Apr 28
EventICMAT 2001 Symposium C (Novel and Advanced Ceramics) - Singapore, Singapore
Duration: 2002 Apr 28 → …


  • CVD SiC
  • Electron cyclotron resonance plasma
  • Nano silicon
  • Oxidation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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