Low temperature operation of polycrystalline silicon thin film transistors

H. Mori, K. Hata, T. Hashimoto, I. Wei Wu, A. G. Lewis, Mitsumasa Koyanagi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The influences of the grain boundary traps on poly-Si TFT device characteristics were evaluated in detail by examining the low temperature device characteristics. It was found that the threshold voltage significantly increases and the field effect mobility considerably decreases at the low temperature because the influences of the grain boundary traps become more pronounced. As a result, the drain current is strikingly reduced when the temperature is decreased. Meanwhile, the kink effect is suppressed at the low temperature due to the increased influences of the grain boundary traps. The hydrogenation treatment mitigated the drain current reduction at the low temperature and enhanced the kink effect.

Original languageEnglish
Pages629-631
Number of pages3
Publication statusPublished - 1991 Jan 1
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 1991 Aug 271991 Aug 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • Engineering(all)

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    Mori, H., Hata, K., Hashimoto, T., Wu, I. W., Lewis, A. G., & Koyanagi, M. (1991). Low temperature operation of polycrystalline silicon thin film transistors. 629-631. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, .