Abstract
Observation of muon and muonium behaviour in semiconducting materials provides valuable insight into analogous hydrogen states and dynamics. We have used muon spin rotation, relaxation and resonance techniques to observe the low-temperature muon behaviour in Czochralski-grown silicon and bulk, Czochralski-grown silicon-germanium alloy materials. Low temperature relaxation of the rapidly moving tetrahedral muonium species and its conversion to a diamagnetic species is seen in the Cz material but not in the float zone silicon, suggesting site change and subsequent ionisation are promoted by the oxygen impurity. This is also the first time muon behaviour in a Si1-xGex alloy material has been presented.
| Original language | English |
|---|---|
| Pages (from-to) | 546-549 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 308-310 |
| DOIs | |
| Publication status | Published - 2001 Dec 1 |
Keywords
- Czochralski-silicon
- Hydrogen
- Muonium
- Silicon-germanium
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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King, P. J. C., & Yonenaga, I. (2001). Low temperature muonium behaviour in Cz-Si and Cz-Si0.91Ge0.09. Physica B: Condensed Matter, 308-310, 546-549. https://doi.org/10.1016/S0921-4526(01)00822-5