Low-temperature mobility of two-dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures

H. Ohno; J. K. Luo; K. Matsuzaki; H. Hasegawa

doi:10.1063/1.100826

Low-temperature mobility of two-dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures

H. Ohno, J. K. Luo, K. Matsuzaki, H. Hasegawa

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al_0.3Ga_0.7As/ Ga _0.8In_0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.

Original language	English
Pages (from-to)	36-38
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	1
DOIs	https://doi.org/10.1063/1.100826
Publication status	Published - 1989 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga 0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.",

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AU - Ohno, H.

AU - Luo, J. K.

AU - Matsuzaki, K.

AU - Hasegawa, H.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga 0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.

AB - Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga 0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.

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