Low-temperature mobility of two-dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures

H. Ohno, J. K. Luo, K. Matsuzaki, H. Hasegawa

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga 0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.

Original languageEnglish
Pages (from-to)36-38
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number1
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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