Abstract
Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga 0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.
| Original language | English |
|---|---|
| Pages (from-to) | 36-38 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 54 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1989 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Ohno, H., Luo, J. K., Matsuzaki, K., & Hasegawa, H. (1989). Low-temperature mobility of two-dimensional electron gas in selectively doped pseudomorphic N-AlGaAs/GaInAs/GaAs structures. Applied Physics Letters, 54(1), 36-38. https://doi.org/10.1063/1.100826