Low temperature microwave annealed FinFETs with less Vth variability

K. Endo, Y. J. Lee, Y. Ishikawa, F. K. Hsueh, P. J. Sung, Y. X. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, H. Yamauchi, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

FinFETs with the low temperature microwave annealing process have been successfully fabricated and the superiority of the microwave annealing process has been precisely studied. For the first time, it is revealed that the microwave annealed FinFET exhibits less Vth variability and lower gate leakage.

Original languageEnglish
Title of host publication2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467394789
DOIs
Publication statusPublished - 2016 May 27
Externally publishedYes
EventInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan, Province of China
Duration: 2016 Apr 252016 Apr 27

Publication series

Name2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

Other

OtherInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
CountryTaiwan, Province of China
CityHsinchu
Period16/4/2516/4/27

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Endo, K., Lee, Y. J., Ishikawa, Y., Hsueh, F. K., Sung, P. J., Liu, Y. X., Matsukawa, T., O'Uchi, S., Tsukada, J., Yamauchi, H., & Masahara, M. (2016). Low temperature microwave annealed FinFETs with less Vth variability. In 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 [7480527] (2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2016.7480527