TY - GEN
T1 - Low temperature metal interdiffusion bonding for micro devices
AU - Fromel, J.
AU - Lin, Y. C.
AU - Wiemer, M.
AU - Gessner, T.
AU - Esashi, M.
PY - 2012
Y1 - 2012
N2 - We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.
AB - We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.
UR - http://www.scopus.com/inward/record.url?scp=84864835482&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864835482&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D.2012.6238080
DO - 10.1109/LTB-3D.2012.6238080
M3 - Conference contribution
AN - SCOPUS:84864835482
SN - 9781467307420
T3 - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
SP - 163
BT - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
T2 - 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Y2 - 22 May 2012 through 23 May 2012
ER -