Low temperature metal interdiffusion bonding for micro devices

J. Fromel, Ikusei Rin, M. Wiemer, T. Gessner, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.

Original languageEnglish
Title of host publicationProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages1
DOIs
Publication statusPublished - 2012 Aug 15
Event2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
Duration: 2012 May 222012 May 23

Other

Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
CountryJapan
CityTokyo
Period12/5/2212/5/23

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Vision and Pattern Recognition

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