Low temperature metal interdiffusion bonding for micro devices

J. Fromel; Ikusei Rin; M. Wiemer; T. Gessner; Masayoshi Esashi

doi:10.1109/LTB-3D.2012.6238080

Low temperature metal interdiffusion bonding for micro devices

J. Fromel, Ikusei Rin, M. Wiemer, T. Gessner, Masayoshi Esashi

Micro System Integration Center (μSIC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We demonstrate solid liquid interdiffusion bonding by gallium and gold as bonding material and show the bonding at 40°C. Because of the low melting point of gallium of 29.8°C several difficulties for processing the gallium exists. We could successful develop deposition, structuring and bonding processes.

Original language	English
Title of host publication	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages	1
DOIs	https://doi.org/10.1109/LTB-3D.2012.6238080
Publication status	Published - 2012 Aug 15
Event	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: 2012 May 22 → 2012 May 23

Other

Other	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Country	Japan
City	Tokyo
Period	12/5/22 → 12/5/23

ASJC Scopus subject areas

Computer Graphics and Computer-Aided Design
Computer Vision and Pattern Recognition

Access to Document

10.1109/LTB-3D.2012.6238080

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Cite this

Fromel, J, Rin, I, Wiemer, M, Gessner, T & Esashi, M 2012, Low temperature metal interdiffusion bonding for micro devices. in Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238080, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 12/5/22. https://doi.org/10.1109/LTB-3D.2012.6238080

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