Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane

Eiji Saito, Sergey Filimonov, Maki Suemitsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 μm/h is extremely high for this ULP process.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages147-150
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010 Jan 1
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: 2009 Oct 112009 Oct 16

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period09/10/1109/10/16

Keywords

  • 3C-SiC
  • High growth rate
  • Organosilane
  • ULP-CVD

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Saito, E., Filimonov, S., & Suemitsu, M. (2010). Low-temperature, low-pressure and ultrahigh-rate growth of single-crystalline 3C-SiC on Si substrate by ULP-CVD using organosilane. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 147-150). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.147