Low temperature liquid phase growth of crystalline InSe grown by the temperature difference method under controlled vapor pressure

Chao Tang, Yohei Sato, Tadao Tanabe, Yutaka Oyama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Indium selenide (InSe), which is one of the most promising layered III-chalcogenide compounds, is an attractive material for applications in infrared detection, solar energy conversion and high mobility transfer devices etc. In this work, InSe crystals were grown from the liquid phase using the temperature difference method under controlled vapor pressure (TDM-CVP) at a growth temperature of 582 °C, which is lower than that of the melt used in the Bridgman-Stockbarger technique. X-ray diffraction (XRD) and Raman spectroscopy results indicate that the grown crystal was γ-InSe with R3m space group symmetry. Photoluminescence measurements were carried out to determine the optical properties of the grown crystal, from which it was confirmed that the sample had a direct bandgap of 1.32 eV, an indirect bandgap of 1.28 eV and an exciton binding energy of 20 meV.

Original languageEnglish
Pages (from-to)54-58
Number of pages5
JournalJournal of Crystal Growth
Volume495
DOIs
Publication statusPublished - 2018 Aug 1

Keywords

  • Indium selenide
  • Liquid phase growth
  • Photoluminescence
  • Two-dimensional materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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